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[-] Evil_Shrubbery@lemm.ee 39 points 2 months ago* (last edited 2 months ago)

using bismuth oxyselenide (Bi₂O₂Se) for the channel, and bismuth selenite oxide (Bi₂SeO₅) as the gate material.

According to the team, their transistor can run 40% faster than today’s most advanced 3-nanometer silicon chips — and it does so while using 10% less energy.

So a viable alternative.

this post was submitted on 05 May 2025
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